IndiumV3, Chine, Analysis, bibRecord, 000135

Preparation and properties of KCl-doped Cu2O thin film by electrodeposition

Identifieur interne : 000135 ( Chine/Analysis ); précédent : 000134; suivant : 000136

Preparation and properties of KCl-doped Cu2O thin film by electrodeposition

Auteurs : RBID : Pascal:13-0151732

Descripteurs français

Pascal (Inist)
- Préparation, Matériau dopé, Couche mince, Croissance film, Dépôt électrolytique, Chlorure de potassium, Oxyde de cuivre, Cl K, KCl, Cu O, Cu2O, Composé minéral, Composé de métal de transition.
Wicri :
- concept : Composé minéral.

English descriptors

KwdEn :
- Copper oxide, Doped materials, Electrodeposition, Film growth, Inorganic compounds, Potassium chloride, Preparation, Thin films, Transition element compounds.

Abstract

With the indium tin oxide-coated glass as working electrode, cuprous oxide thin film is fabricated by means of electrodeposition. The effects of KCl doped and annealing treatment upon Cu₂O thin film morphology, surface resistivity, open-circuit voltage, electric conduction types and visible light response are studied. The research results indicate that KCl doped has a great effect upon Cu₂O crystal morphology, thus, making Cu₂O thin film surface resistivity drop, and the open-circuit voltage increase and that electric conduction types are transformed from p type into n type, and the visible light (400-500 nm) absorption rate is slightly reduced. Annealing treatment can obviously decrease C_U20 thin film surface resistivity and improve its open-circuit voltage. When KCl concentration in electrolytic solution reaches 7 mmol/L, Cu₂O thin film morphology can be changed from the dendritic crystal into the cubic crystal and Cu₂O thin film surface resistivity decreases from the initial 2.5 x 10⁶ Ω cm to 8.5 x 10⁴ Ω cm. After annealing treatment at 320°C for 30 min, the surface resistivity decreases to 8.5 x 10² Ω cm, and the open-circuit voltage increases from the initial 3.1 mV to 79.2 mV.

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Pascal:13-0151732

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Preparation and properties of KCl-doped Cu<sub>2</sub>
O thin film by electrodeposition</title>
<author><name>XIAOJIAO YU</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Xi'an University of Technology</s1>
<s2>Xi'an 710048</s2>
<s3>CHN</s3>
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<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Xi'an University of Technology</wicri:noRegion>
</affiliation>
</author>
<author><name>XINMING LI</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Xi'an University of Technology</s1>
<s2>Xi'an 710048</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Xi'an University of Technology</wicri:noRegion>
</affiliation>
</author>
<author><name>GANG ZHENG</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Xi'an University of Technology</s1>
<s2>Xi'an 710048</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
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<country>République populaire de Chine</country>
<wicri:noRegion>Xi'an University of Technology</wicri:noRegion>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Northwestern Polytechnical University</s1>
<s2>Xi'an 710072</s2>
<s3>CHN</s3>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Northwestern Polytechnical University</wicri:noRegion>
</affiliation>
</author>
<author><name>YUCHEN WEI</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>The Hong Kong University of Science and Technology, Clear Water Bay</s1>
<s2>Kowloon</s2>
<s3>HKG</s3>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Hong Kong</country>
<wicri:noRegion>Kowloon</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Zhang, Ama" uniqKey="Zhang A">Ama Zhang</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Xi'an University of Technology</s1>
<s2>Xi'an 710048</s2>
<s3>CHN</s3>
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<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
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</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Xi'an University of Technology</wicri:noRegion>
</affiliation>
</author>
<author><name>BINGHUA YAO</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Xi'an University of Technology</s1>
<s2>Xi'an 710048</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
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</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Xi'an University of Technology</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">13-0151732</idno>
<date when="2013">2013</date>
<idno type="stanalyst">PASCAL 13-0151732 INIST</idno>
<idno type="RBID">Pascal:13-0151732</idno>
<idno type="wicri:Area/Main/Corpus">000F53</idno>
<idno type="wicri:Area/Main/Repository">000667</idno>
<idno type="wicri:Area/Chine/Extraction">000135</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0169-4332</idno>
<title level="j" type="abbreviated">Appl. surf. sci.</title>
<title level="j" type="main">Applied surface science</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Copper oxide</term>
<term>Doped materials</term>
<term>Electrodeposition</term>
<term>Film growth</term>
<term>Inorganic compounds</term>
<term>Potassium chloride</term>
<term>Preparation</term>
<term>Thin films</term>
<term>Transition element compounds</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Préparation</term>
<term>Matériau dopé</term>
<term>Couche mince</term>
<term>Croissance film</term>
<term>Dépôt électrolytique</term>
<term>Chlorure de potassium</term>
<term>Oxyde de cuivre</term>
<term>Cl K</term>
<term>KCl</term>
<term>Cu O</term>
<term>Cu2O</term>
<term>Composé minéral</term>
<term>Composé de métal de transition</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Composé minéral</term>
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<front><div type="abstract" xml:lang="en">With the indium tin oxide-coated glass as working electrode, cuprous oxide thin film is fabricated by means of electrodeposition. The effects of KCl doped and annealing treatment upon Cu<sub>2</sub>
O thin film morphology, surface resistivity, open-circuit voltage, electric conduction types and visible light response are studied. The research results indicate that KCl doped has a great effect upon Cu<sub>2</sub>
O crystal morphology, thus, making Cu<sub>2</sub>
O thin film surface resistivity drop, and the open-circuit voltage increase and that electric conduction types are transformed from p type into n type, and the visible light (400-500 nm) absorption rate is slightly reduced. Annealing treatment can obviously decrease C<sub>U2</sub>
0 thin film surface resistivity and improve its open-circuit voltage. When KCl concentration in electrolytic solution reaches 7 mmol/L, Cu<sub>2</sub>
O thin film morphology can be changed from the dendritic crystal into the cubic crystal and Cu<sub>2</sub>
O thin film surface resistivity decreases from the initial 2.5 x 10<sup>6</sup>
 Ω cm to 8.5 x 10<sup>4</sup>
 Ω cm. After annealing treatment at 320°C for 30 min, the surface resistivity decreases to 8.5 x 10<sup>2</sup>
 Ω cm, and the open-circuit voltage increases from the initial 3.1 mV to 79.2 mV.</div>
</front>
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O thin film by electrodeposition</s1>
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<fA11 i1="01" i2="1"><s1>XIAOJIAO YU</s1>
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<fA11 i1="03" i2="1"><s1>GANG ZHENG</s1>
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<fA11 i1="05" i2="1"><s1>ZHANG (Ama)</s1>
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<fA11 i1="06" i2="1"><s1>BINGHUA YAO</s1>
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<s2>Xi'an 710048</s2>
<s3>CHN</s3>
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<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>5 aut.</sZ>
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<fA14 i1="02"><s1>Northwestern Polytechnical University</s1>
<s2>Xi'an 710072</s2>
<s3>CHN</s3>
<sZ>3 aut.</sZ>
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<fA14 i1="03"><s1>The Hong Kong University of Science and Technology, Clear Water Bay</s1>
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<fC01 i1="01" l="ENG"><s0>With the indium tin oxide-coated glass as working electrode, cuprous oxide thin film is fabricated by means of electrodeposition. The effects of KCl doped and annealing treatment upon Cu<sub>2</sub>
O thin film morphology, surface resistivity, open-circuit voltage, electric conduction types and visible light response are studied. The research results indicate that KCl doped has a great effect upon Cu<sub>2</sub>
O crystal morphology, thus, making Cu<sub>2</sub>
O thin film surface resistivity drop, and the open-circuit voltage increase and that electric conduction types are transformed from p type into n type, and the visible light (400-500 nm) absorption rate is slightly reduced. Annealing treatment can obviously decrease C<sub>U2</sub>
0 thin film surface resistivity and improve its open-circuit voltage. When KCl concentration in electrolytic solution reaches 7 mmol/L, Cu<sub>2</sub>
O thin film morphology can be changed from the dendritic crystal into the cubic crystal and Cu<sub>2</sub>
O thin film surface resistivity decreases from the initial 2.5 x 10<sup>6</sup>
 Ω cm to 8.5 x 10<sup>4</sup>
 Ω cm. After annealing treatment at 320°C for 30 min, the surface resistivity decreases to 8.5 x 10<sup>2</sup>
 Ω cm, and the open-circuit voltage increases from the initial 3.1 mV to 79.2 mV.</s0>
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<fC02 i1="03" i2="3"><s0>001B80</s0>
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<fC03 i1="01" i2="X" l="FRE"><s0>Préparation</s0>
<s5>01</s5>
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<s5>01</s5>
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<s5>01</s5>
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<fC03 i1="02" i2="3" l="FRE"><s0>Matériau dopé</s0>
<s5>02</s5>
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<s5>03</s5>
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<s5>03</s5>
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<s5>04</s5>
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<s5>04</s5>
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<s5>05</s5>
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<s5>05</s5>
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<fC03 i1="06" i2="X" l="FRE"><s0>Chlorure de potassium</s0>
<s5>15</s5>
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<s5>15</s5>
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<s5>16</s5>
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<s5>16</s5>
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<fC03 i1="08" i2="3" l="FRE"><s0>Cl K</s0>
<s4>INC</s4>
<s5>32</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>KCl</s0>
<s4>INC</s4>
<s5>33</s5>
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<fC03 i1="10" i2="3" l="FRE"><s0>Cu O</s0>
<s4>INC</s4>
<s5>34</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Cu2O</s0>
<s4>INC</s4>
<s5>35</s5>
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<s5>62</s5>
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<s5>62</s5>
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<fC03 i1="13" i2="3" l="FRE"><s0>Composé de métal de transition</s0>
<s5>63</s5>
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</fN21>
<fN44 i1="01"><s1>OTO</s1>
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<fN82><s1>OTO</s1>
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   |texte=   Preparation and properties of KCl-doped Cu2O thin film by electrodeposition
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Preparation and properties of KCl-doped Cu2O thin film by electrodeposition

Preparation and properties of KCl-doped Cu2O thin film by electrodeposition

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri